switching diode dap202k ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) ultra high speed switching ? features 1) small mold type. (smd3) 2) high reliability. ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ?absolute maximum ratings (ta=25c) symbol unit v rm v v r v i fm ma io ma i surge a pd mw tj c tstg c ?electrical characteristics (ta=25c) symbol min. typ. max. unit conditions v f - - 1.2 v i f =100ma i r - - 0.1 a v r =70v ct - - 3.5 pf v r =6v , f=1mhz trr - - 4 ns v r =6v , if=5ma , rl=50 ? reverse recovery time parameter forward voltage reverse current capacitance between terminals storage temperature ? 55 to ? 150 power dissipation 200 junction temperature 150 average rectified forward current (single) 100 surge current (t=1us) 4 reverse voltage (dc) 80 forward voltage (single) 300 parameter limits reverse voltage (repetitive peak) 80 smd3 1.0min. 0.8min. 2.4 0.95 1.9 3.20.1 4.00.1 4.00.1 2.00.05 1.50.1 0 3.50.05 1.750.1 8.00.2 1.350.1 3.20.1 1.05min 3.20.1 0.30.1 5.50.2 00.5 rohm : smd3 jeita : sc-59 week code jedec :s0t-346 0.4 0.1 0.06 2.90.2 2.80.2 1.90.2 1.6 0.2 0.1 0.95 0.95 0.1 0.05 `?? ? 00.1 0.15 1.10.2 0.01 0.80.1 (2) (1) (3) 0.30.6 each lead has same dimension 1/2 2011.06 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
dap202k 0 1 2 3 4 5 6 7 8 9 10 ave:1.32kv ave:5.47kv 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=10ma i f =100ma 300us time mounted on epoxy board 1 10 100 0.1 1 10 100 t ifsm 0 1 2 3 4 5 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 5 10 15 20 ave:2.50a 8.3ms ifsm 1cyc 0 1 2 3 4 5 6 7 8 9 10 ave:1.80pf ta=25 v r =6v f=1mhz n=10pcs 0 10 20 30 40 50 60 70 80 90 100 850 860 870 880 890 900 0.1 1 10 0 5 10 15 20 0.1 1 10 100 1000 10000 100000 0 10203040506070 ta=125 ta= ? 25 ta=25 ta=75 ta=150 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 100 0 ta= ? 25 ta=125 ta=75 ta=25 ta=150 0 1 2 3 4 5 6 7 8 9 10 forward voltage : v f (mv) v f -i f characteristics forward current : i f (ma) reverse current : i r (na) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage : v r (v) v r -ct characteristics v f dispersion map forward voltage : v f (mv) reverse current : i r (na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map i fsm disresion map peak surge forward current : i fsm (a) peak surge forward current : i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current : i fsm (a) time:t(ms) i fsm -t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth ( /w) electrostatic ddischarge test esd(kv) esd dispersion map trr dispersion map reverse recovery time:trr(ns) f=1mhz ave:877.0mv ta=25 i f =100ma n=30pcs ta=25 v r =70v n=10pcs ave:17.93na ta=25 v r =6v i f =5ma rl=50 ? n=10pcs ave:1.93ns c=200pf r=0 ? c=100pf r=1.5k ? 2/2 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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